Stresses and magnetoelastic anisotropies at implantation edges in ion-implanted garnet films

1089-7550

AIP Digital Archive

Physics

Stresses at the edge of an ion-implanted region in a magnetic garnet film have been calculated by analogy with thermal-induced stresses in an elastic half space. From these stresses, magnetoelastic anisotropies have been computed for two different implant profiles. Stress calculations show that stress relaxation near an implantation edge decreases with distance from the edge with an exponential decay length of approximately 4t, where t is the implantation layer thickness. Stress perpendicular to the film surface and shearing stress are significant at the implantation edge, but decrease more quickly with decay lengths of approximately 0.8t and 0.6t, respectively. Because of perpendicular and shearing stresses, the anisotropy under the edge of the implantation mask favors planar magnetization. For similar reasons, the anisotropy in the implanted region near the mask edge favors perpendicular magnetization, effectively causing a shift in the mask edge toward the [112¯] direction. The shift is especially evident in materials with λ111≠λ100 and is on the order of 2.5t for a material with λ111=−λ100.

Electronic Resource