Interband transitions in molecular-beam-epitaxial AlxGa1−xAs/GaAs
Aubel, J. L. ; Reddy, U. K. ; Sundaram, S. ; Beard, W. T. ; Comas, James
[S.l.] : American Institute of Physics (AIP)
Published 1985
[S.l.] : American Institute of Physics (AIP)
Published 1985
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Interband transition energies for AlxGa1−xAs layers grown by molecular-beam epitaxy (MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E0, E0+Δ0, E1 and E1+Δ1 to describe variations of energy with composition. Although the x values were not accurately known, the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.
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| Type of Medium: |
Electronic Resource
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| URL: |