Minority-carrier diffusion and recombination in CdZnS/CuInSe2 solar cells
Ahrenkiel, R. K. ; Matson, R. J. ; Osterwald, C. R. ; Dunlavy, D. J. ; Kazmerski, L. L.
[S.l.] : American Institute of Physics (AIP)
Published 1985
[S.l.] : American Institute of Physics (AIP)
Published 1985
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Minority-carrier diffusion has been investigated in as-grown CdZnS/CuInSe2 solar cells. Capacitance-voltage (C-V) and photoconductivity measurements are combined to determine diffusion and interface recombination processes. Diffusion lengths of about 2 μm and a small interface recombination velocity are determined from biased photoconductivity, biased spectral response, and photoluminescence studies. Photoluminescence studies also indicate that a much lower interface recombination velocity occurs at the CdZnS/CuInSe2 interface than that at a bare CuInSe2 surface.
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| Type of Medium: |
Electronic Resource
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| URL: |