Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAs
Graham, R. J. ; Spence, J. C. H. ; Roedel, R. J.
[S.l.] : American Institute of Physics (AIP)
Published 1986
[S.l.] : American Institute of Physics (AIP)
Published 1986
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Zn-doped GaAs diffused with Sn has been examined in cross section by transmission electron microscopy (TEM) and high-resolution cathodoluminescence (CL) in an attempt to account for the penetration of Sn into this material but the apparent lack of any electricity activity. TEM shows that small Sn-rich precipitates are present in the GaAs near the surface. CL indicates that some of the Sn dopes of GaAs n-type, but additionally that new emissions in the spectra at ∼1.44 and ∼1.455 eV are seen to originate from the diffused region. A possible explanation for the lack of electrical activity of the Sn is discussed in terms of these results and may lie in the formation of a compensating Sn-related complex or an accumulation of Zn in the diffused region.
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| Type of Medium: |
Electronic Resource
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| URL: |