Thermal oxidation of heavily boron-implanted polycrystalline-silicon films
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The thermal oxidation of heavily boron-implanted low-pressure chemical vapor deposition (LPCVD) polysilicon films in dry and wet oxygen ambients has been studied. In order to understand the roles of grain boundaries, randomly oriented crystallites, and the doping effect on oxidation behavior in polysilicon films, detailed comparisons were made among the relative oxidation behaviors for polysilicon films and single-crystal silicon. The results show no significant difference for the doping effect on oxidation rate enhancement for polysilicon films and single-crystal silicon, and are consistent with the model proposed by Saraswat and Singh.
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| Type of Medium: |
Electronic Resource
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| URL: |