Ionized Mg doping in molecular-beam epitaxy of GaAs
Mannoh, M. ; Nomura, Y. ; Shinozaki, K. ; Mihara, M. ; Ishii, M.
[S.l.] : American Institute of Physics (AIP)
Published 1986
[S.l.] : American Institute of Physics (AIP)
Published 1986
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular-beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have been achieved. Photoluminescence measurements suggest that the damage due to Mg-ion bombardment is negligible when the ion accelerating voltage (Va) (approximately-less-than)130 V. For higher Va , the damage can be removed by postgrowth annealing.
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| Type of Medium: |
Electronic Resource
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| URL: |