An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes
Chilana, G. S. ; Gupta, R. S. ; Srivastava, G. P.
[S.l.] : American Institute of Physics (AIP)
Published 1986
[S.l.] : American Institute of Physics (AIP)
Published 1986
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode.
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| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289677885636610 |
|---|---|
| autor | Chilana, G. S. Gupta, R. S. Srivastava, G. P. |
| autorsonst | Chilana, G. S. Gupta, R. S. Srivastava, G. P. |
| book_url | http://dx.doi.org/10.1063/1.336434 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218763670 |
| iqvoc_descriptor_title | iqvoc_00000708:analysis iqvoc_00000625:semiconductor iqvoc_00000633:diodes |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1986 |
| publikationsjahr_facette | 1986 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1986 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 59 (1986), S. 1702-1706 |
| search_space | articles |
| shingle_author_1 | Chilana, G. S. Gupta, R. S. Srivastava, G. P. |
| shingle_author_2 | Chilana, G. S. Gupta, R. S. Srivastava, G. P. |
| shingle_author_3 | Chilana, G. S. Gupta, R. S. Srivastava, G. P. |
| shingle_author_4 | Chilana, G. S. Gupta, R. S. Srivastava, G. P. |
| shingle_catch_all_1 | Chilana, G. S. Gupta, R. S. Srivastava, G. P. An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Chilana, G. S. Gupta, R. S. Srivastava, G. P. An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Chilana, G. S. Gupta, R. S. Srivastava, G. P. An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Chilana, G. S. Gupta, R. S. Srivastava, G. P. An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes |
| shingle_title_2 | An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes |
| shingle_title_3 | An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes |
| shingle_title_4 | An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:39.079Z |
| titel | An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes |
| titel_suche | An analysis of majority-carrier three-layer bulk semiconductor unipolar diodes |
| topic | U |
| uid | nat_lic_papers_NLZ218763670 |