Preparation of highly photosensitive hydrogenated amorphous Si-C alloys from a glow-discharge plasma
Matsuda, A. ; Yamaoka, T. ; Wolff, S. ; Koyama, M. ; Imanishi, Y. ; Kataoka, H. ; Matsuura, H. ; Tanaka, K.
[S.l.] : American Institute of Physics (AIP)
Published 1986
[S.l.] : American Institute of Physics (AIP)
Published 1986
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
The preparation conditions for the deposition of hydrogenated amorphous silicon-carbon alloys (a-SiC:H) from a glow-discharge plasma have been systematically scanned by changing the starting-gas materials as well as the starting gas to hydrogen dilution ratio. A highly photosensitive alloy showing a photoconductivity to dark conductivity ratio of 107 at a band gap of 2.0 eV was prepared under optimized conditions.
|
| Type of Medium: |
Electronic Resource
|
| URL: |