GaAs/AlGaAs distributed feedback structure with multiquantum well for surface-emitting laser

Nomura, Y. ; Shinozaki, K. ; Asakawa, K. ; Ishii, M.

[S.l.] : American Institute of Physics (AIP)
Published 1986
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate laser emission by photopumping at room temperature from a distributed feedback structure for a surface-emitting laser constructed by alternating growths of a GaAs/AlGaAs multiquantum well and an Al0.7Ga0.3As layer using molecular-beam epitaxy. A threshold photoexcitation intensity lower than 3.1×105 W/cm2, a 34-nm longitudinal mode spacing, and a 2.3-nm peak width of the laser emission were observed for the 6-μm-thick multilayer.
Type of Medium:
Electronic Resource
URL: