High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser
Naganuma, M. ; Song, J. J. ; Kim, Y. B. ; Masselink, W. T. ; Morkoç, H. ; Vreeland, T.
[S.l.] : American Institute of Physics (AIP)
Published 1986
[S.l.] : American Institute of Physics (AIP)
Published 1986
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Ultralow-power, high-resolution, pulsed-laser photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies were carried out in molecular-beam-epitaxial GaAs/AlxGa1−xAs multi-quantum-well structures at 5 K. Fine structures were observed for the first time in the PLE spectra, both in the heavy-hole and light-hole excitonic regions. Most of the fine structures are considered to arise from monolayer fluctuations in the thicknesses of the GaAs wells. Dramatic changes in the line shapes and the peak positions of the PL and PLE spectra were observed by applying selective PL detection and excitation spectroscopic techniques.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289677252296704 |
|---|---|
| autor | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. |
| autorsonst | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. |
| book_url | http://dx.doi.org/10.1063/1.337268 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218756003 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Ultralow-power, high-resolution, pulsed-laser photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies were carried out in molecular-beam-epitaxial GaAs/AlxGa1−xAs multi-quantum-well structures at 5 K. Fine structures were observed for the first time in the PLE spectra, both in the heavy-hole and light-hole excitonic regions. Most of the fine structures are considered to arise from monolayer fluctuations in the thicknesses of the GaAs wells. Dramatic changes in the line shapes and the peak positions of the PL and PLE spectra were observed by applying selective PL detection and excitation spectroscopic techniques. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1986 |
| publikationsjahr_facette | 1986 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1986 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 60 (1986), S. 1740-1744 |
| search_space | articles |
| shingle_author_1 | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. |
| shingle_author_2 | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. |
| shingle_author_3 | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. |
| shingle_author_4 | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. |
| shingle_catch_all_1 | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser Ultralow-power, high-resolution, pulsed-laser photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies were carried out in molecular-beam-epitaxial GaAs/AlxGa1−xAs multi-quantum-well structures at 5 K. Fine structures were observed for the first time in the PLE spectra, both in the heavy-hole and light-hole excitonic regions. Most of the fine structures are considered to arise from monolayer fluctuations in the thicknesses of the GaAs wells. Dramatic changes in the line shapes and the peak positions of the PL and PLE spectra were observed by applying selective PL detection and excitation spectroscopic techniques. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser Ultralow-power, high-resolution, pulsed-laser photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies were carried out in molecular-beam-epitaxial GaAs/AlxGa1−xAs multi-quantum-well structures at 5 K. Fine structures were observed for the first time in the PLE spectra, both in the heavy-hole and light-hole excitonic regions. Most of the fine structures are considered to arise from monolayer fluctuations in the thicknesses of the GaAs wells. Dramatic changes in the line shapes and the peak positions of the PL and PLE spectra were observed by applying selective PL detection and excitation spectroscopic techniques. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser Ultralow-power, high-resolution, pulsed-laser photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies were carried out in molecular-beam-epitaxial GaAs/AlxGa1−xAs multi-quantum-well structures at 5 K. Fine structures were observed for the first time in the PLE spectra, both in the heavy-hole and light-hole excitonic regions. Most of the fine structures are considered to arise from monolayer fluctuations in the thicknesses of the GaAs wells. Dramatic changes in the line shapes and the peak positions of the PL and PLE spectra were observed by applying selective PL detection and excitation spectroscopic techniques. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Naganuma, M. Song, J. J. Kim, Y. B. Masselink, W. T. Morkoç, H. Vreeland, T. High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser Ultralow-power, high-resolution, pulsed-laser photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies were carried out in molecular-beam-epitaxial GaAs/AlxGa1−xAs multi-quantum-well structures at 5 K. Fine structures were observed for the first time in the PLE spectra, both in the heavy-hole and light-hole excitonic regions. Most of the fine structures are considered to arise from monolayer fluctuations in the thicknesses of the GaAs wells. Dramatic changes in the line shapes and the peak positions of the PL and PLE spectra were observed by applying selective PL detection and excitation spectroscopic techniques. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser |
| shingle_title_2 | High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser |
| shingle_title_3 | High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser |
| shingle_title_4 | High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:38.155Z |
| titel | High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser |
| titel_suche | High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser |
| topic | U |
| uid | nat_lic_papers_NLZ218756003 |