A molecular effect of hydrogen trapping in the implantation of molecular hydrogen ions into aluminum and aluminum oxide
Imanishi, N. ; Fukumura, T. ; Miyamoto, S. ; Iwasaki, M.
[S.l.] : American Institute of Physics (AIP)
Published 1987
[S.l.] : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Molecular effects of hydrogen trapping are examined for the implantation of H+2 and H+3 molecular ions into aluminum and aluminum oxide. It was found that the H+3 bombardment enhances trapping efficiencies more than H+2 by a factor of 2.7 for Al and 4.3 for Al2O3. These results indicate the importance of the interaction between hydrogen and vacancy clusters.
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| Type of Medium: |
Electronic Resource
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| URL: |