Growth of GeSi/Si strained-layer superlattices using limited reaction processing
Gronet, C. M. ; King, C. A. ; Opyd, W. ; Gibbons, J. F. ; Wilson, S. D. ; Hull, R.
[S.l.] : American Institute of Physics (AIP)
Published 1987
[S.l.] : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
SiGe/Si superlattices were grown using limited reaction processing. Each multilayer structure was fabricated in situ by changing the gas composition between high-temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly deposited and were examined using transmission electron microscopy, sputtering Auger electron spectroscopy, and Rutherford backscattering. Si/SiGe interfaces are abrupt to within a few monolayers, establishing for the first time the use of a chemical vapor deposition technique to fabricate abrupt GeSi/Si-based heterostructures.
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| Type of Medium: |
Electronic Resource
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| URL: |