Transmission electron microscopy of carbon-implanted {111} copper surfaces

1089-7550

AIP Digital Archive

Physics

Carbon ions with an energy of 150 keV were implanted in {111} surfaces of copper single crystals at doses of 1016 C+ cm−2 and 1017 C+ cm−2. The radiation damage below the implanted surfaces was examined by transmission electron microscopy of cross sections of the surface regions. The effects of annealing for 30 min at 600 and 750 °C were also studied. Damage consisted of a band of small defect clusters, dislocation loops, and dislocations in the band and extending from it. The depth of this band is approximately 40% deeper than that predicted from ion range theory, and the reason for this is not clear. The range increases with larger dose. The dislocation structures are consistent with the strains due to swelling being accommodated by dislocations.

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