The first stages of oxidation of a-Si studied with Auger electron spectroscopy
Vidal, R. ; Koropecki, R. ; Arce, R. ; Ferrón, J.
[S.l.] : American Institute of Physics (AIP)
Published 1987
[S.l.] : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have studied the first stages of low-pressure oxidation of amorphous silicon using Auger electron spectroscopy. The application of the principal component analysis to the Si L2,3 core-valence-valence transition spectra, acquired during the oxidation, allows us for the interpretation of the oxidation kinetics of the a-Si. Using the target transformation method we have isolated the Auger spectra of the components present during the oxidation process. We observe an intermediate state in the Si-SiO2 interface formed during the oxidation. This state was attributed to a SiOx-type compound.
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| Type of Medium: |
Electronic Resource
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| URL: |