Monte Carlo calculation of velocity-field characteristics in GaInAs/InP and GaInAs/AlInAs single-well heterostructures
Yoon, K. S. ; Stringfellow, G. B. ; Huber, R. J.
[S.l.] : American Institute of Physics (AIP)
Published 1987
[S.l.] : American Institute of Physics (AIP)
Published 1987
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Two-dimensional scattering rates are formulated using a two-subband triangular well approximation for GaInAs/InP and GaInAs/AlInAs single-well heterostructures, and two-dimensional electron gas (2-DEG) velocity characteristics are calculated using one-particle Monte Carlo simulations. Although the alloy scattering in GaInAs limits the low field mobility at low temperatures, a significant increase in the velocity characteristics is obtained for the 2-DEG at both 77 and 300 K. This result clearly illustrates that GaInAs is a promising material for high speed devices at 300 K and even at 77 K.
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| Type of Medium: |
Electronic Resource
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| URL: |