A comparison between Sb and As implantation for the formation of highly conducting shallow silicon layers

1089-7550

AIP Digital Archive

Physics

Highly conducting silicon layers of less than 500 A(ring) in thickness have been formed following the implantation of 12-keV antimony or 10-keV arsenic and subsequent annealing at 700 °C for 15 min. Minimum resistivities of 2.2×10−4 Ω cm for antimony and 6.5×10−4 Ω cm for arsenic at a dose of 1×1015 cm−2 are obtained, with corresponding peak electrical activities of ∼4.8×1020 cm−3 and ∼1.6×1020 cm−3, respectively. Both correspond to metastable states well above the equilibrium solid solubilities. Whereas the arsenic activity remains almost unchanged for anneals of up to ∼300 min, the higher antimony activity decreases, but remains above that of the arsenic.

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