Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs
Bose, S. S. ; Lee, B. ; Kim, M. H. ; Stillman, G. E. ; Wang, W. I.
[S.l.] : American Institute of Physics (AIP)
Published 1988
[S.l.] : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The incorporation of Si in high-purity lightly Si-doped GaAs grown simultaneously on (100), (311)A, and (311)B GaAs substrates by molecular-beam epitaxy has been studied. Photothermal ionization spectroscopy shows that Si is incorporated predominantly as a donor for growth on (100) and (311)B substrates, whereas low-temperature photoluminescence shows that Si is incorporated predominantly as an acceptor for growth on a (311)A substrate. Spectroscopic and Hall-effect measurements show that the dominance of Si donors in the samples grown on the (100) and (311)B substrates renders these samples n-type while the dominance of Si acceptors in the sample grown on the (311)A substrate renders that sample p-type.
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| Type of Medium: |
Electronic Resource
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| URL: |