Defect levels in CdS/CuInSe2 thin-film solar cells
Ramanathan, V. ; Noufi, R. ; Powell, R. C.
[S.l.] : American Institute of Physics (AIP)
Published 1988
[S.l.] : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Thermally stimulated capacitance spectroscopy has been employed to study the defect levels in high-efficiency, CdS/CuInSe2 thin-film solar cells. Voltage bias changes were used to probe the majority-carrier traps and light bias was employed, for the first time, to reveal minority-carrier traps. The light bias thermally stimulated capacitance has shown the presence of a distribution of electron trapping levels in CuInSe2. The capacitance under steady illumination shows that the traps produce a large photocapacitance. The implications of these observations in terms of device performance is discussed.
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| Type of Medium: |
Electronic Resource
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| URL: |