Crystal quality investigation of InGaAs/InP and InGaAlAs/InP single heterostructures grown by molecular-beam epitaxy
Ferrari, C. ; Franzosi, P. ; Gastaldi, L. ; Taiariol, F.
[S.l.] : American Institute of Physics (AIP)
Published 1988
[S.l.] : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
X-ray double-crystal diffractometry has been used to assess the crystal quality of InGaAs/InP single heterostructures grown by molecular-beam epitaxy. Experiments performed on step etched samples have indeed shown that the width of the epilayer Bragg peak as a function of the epilayer thickness is in good agreement with the theoretical predictions for perfect crystals. Finally, preliminary observations of InGaAlAs/InP heterostructures have shown very narrow Bragg peaks and this demonstrates the good crystal quality of the quaternary layers.
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| Type of Medium: |
Electronic Resource
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| URL: |