New silicon-related deep broadband luminescence emission in Al0.3Ga0.7As epitaxial layers
Souza, P. ; Rao, E. V. K. ; Alexandre, F. ; Gauneau, M.
[S.l.] : American Institute of Physics (AIP)
Published 1988
[S.l.] : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Luminescence spectra of variously silicon-doped Al0.3Ga0.7As (Al0.3Ga0.7As@B: Si) single layers grown by molecular-beam epitaxy were investigated as a function of silicon effusion-cell temperature. A correlation between silicon incorporation as a complex involving SiAs and the existence of a deep broadband emission is suggested. To achieve this, in addition to photoluminescence, Hall effect, capacitance, and secondary ion mass spectroscopy measurements were also performed.
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| Type of Medium: |
Electronic Resource
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| URL: |