Effect of the addition of a third element in a high silicon-iron alloy
Nakamura, H. ; Tsuya, N. ; Saito, Y. ; Katsumata, Y. ; Harada, Y.
[S.l.] : American Institute of Physics (AIP)
Published 1988
[S.l.] : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Concerning the decrease of the wall motion resistive magnetic properties such as magnetocrystalline anisotropy of an electric sheet, we reported that quick quenching from 1100 °C suppressed the formation of a B2 superlattice which is roughly proportional to the anisotropy. Using iron single crystals containing 5.5 wt. % silicon with the addition of a small amount of a third element such as Mo to suppress the formation of the superlattice, we describe the quenching temperature dependence of the anisotropy and saturation magnetization. A remarkable decrease of room-temperature anisotropy was found in crystals with the additional element compared to those without the element.
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| Type of Medium: |
Electronic Resource
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| URL: |