Electric field effects in excitonic absorption for high-quality InGaAs/InAlAs multiple-quantum-well structures
Nojima, S. ; Kawamura, Y. ; Wakita, K. ; Mikami, O.
[S.l.] : American Institute of Physics (AIP)
Published 1988
[S.l.] : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The electric field effects in excitonic absorption characteristics are studied for high-quality InGaAs/InAlAs multiple-quantum-well structures grown by molecular beam epitaxy. The minute comparison between the experimental and theoretical results verifies the following: first, the variations of exciton levels in the first subband show excellent agreement with the calculations; second, the exciton level in the second subband shows a shift to the higher energy (blue shift).
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| Type of Medium: |
Electronic Resource
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| URL: |