Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs
Whipple, G. H. ; Thompson, M. G. ; Kulkarni, A. K.
[S.l.] : American Institute of Physics (AIP)
Published 1988
[S.l.] : American Institute of Physics (AIP)
Published 1988
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.
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| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289671985299456 |
|---|---|
| autor | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. |
| autorsonst | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. |
| book_url | http://dx.doi.org/10.1063/1.341635 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218709560 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1988 |
| publikationsjahr_facette | 1988 |
| publikationsjahr_intervall | 8014:1985-1989 |
| publikationsjahr_sort | 1988 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 64 (1988), S. 2519-2522 |
| search_space | articles |
| shingle_author_1 | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. |
| shingle_author_2 | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. |
| shingle_author_3 | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. |
| shingle_author_4 | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. |
| shingle_catch_all_1 | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Whipple, G. H. Thompson, M. G. Kulkarni, A. K. Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs |
| shingle_title_2 | Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs |
| shingle_title_3 | Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs |
| shingle_title_4 | Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:33.562Z |
| titel | Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs |
| titel_suche | Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAs |
| topic | U |
| uid | nat_lic_papers_NLZ218709560 |