Effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide layers grown on (100) GaAs by metalorganic magnetron sputtering
Rao, T. Sudersena ; Halpin, C. ; Webb, J. B. ; Noad, J. P. ; McCaffrey, J.
[S.l.] : American Institute of Physics (AIP)
Published 1989
[S.l.] : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
The effect of substrate temperature and III/V ratio on the growth rate and surface morphology of heteroepitaxial InSb films grown on GaAs(100) using metalorganic magnetron sputtering has been studied. The surface morphology showed a strong dependence on growth temperature and III/V ratio. Films with "mirrorlike'' surfaces could be routinely obtained for deposition temperatures near 400 °C. For films grown above 300 °C, the growth rate increased with increasing trimethylindium flow, at constant antimony sputter power, and exhibited a peak near 400 °C. In this region the growth rate was thermally activated with an observed activation energy of 0.24 eV. Above 400 °C the growth rate decreased with increasing temperature. The surface morphology of these higher-temperature layers indicated a selective etching process as the mechanism for growth rate reduction. Cross-sectional transmission electron microscopy studies indicated a defect density in excess of 1011 cm−2 at the InSb/GaAs interface which decreased to 4.0×109 cm−2 at a distance of 0.3 μm from the interface.
|
| Type of Medium: |
Electronic Resource
|
| URL: |