Electrical behavior of a static hole inversion layer at the i-AlAs/n-GaAs heterojunction
Qian, Q.-D. ; Melloch, M. R. ; Cooper, J. A.
[S.l.] : American Institute of Physics (AIP)
Published 1989
[S.l.] : American Institute of Physics (AIP)
Published 1989
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The photocapacitance-voltage and current-voltage characteristics of p+-GaAs/i-AlAs/n-GaAs heterojunction enhancement mode capacitors have been studied in the temperature range from 9.5 to 273 K. Under steady-state illumination, the emission mechanisms for a photopopulated hole inversion layer are found to be thermionic field emission at high temperatures and tunneling at low temperatures. Estimates are made of the minority-carrier recombination lifetime, valence-band discontinuity, and the tunneling effective mass for holes in the AlAs barrier layer. The decay of inversion hole concentration after terminating the photoinjection process is measured with a capacitance transient technique, which is sensitive to current levels below 1 pA. The dominant decay mechanisms at this current level are found to be injection to the substrate at low-inversion bias voltages and emission over the AlAs barrier via the Frenkel–Poole mechanism at high-inversion bias voltages.
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| Type of Medium: |
Electronic Resource
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| URL: |