Conduction-band discontinuities of InxAl1−xAs/In0.53Ga0.47As n-isotype heterojunctions
Lee, P. Z. ; Lin, C. L. ; Ho, J. C. ; Meiners, L. G. ; Wieder, H. H.
[S.l.] : American Institute of Physics (AIP)
Published 1990
[S.l.] : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The conduction-band offsets ΔEc of n-isotype InxAl1−xAs/In0.53Ga0.47As heterojunctions, with 0.47〈x≤0.52, grown by molecular-beam epitaxy, lattice matched and pseudomorphically strained on n+-InP substrates, were determined from the capacitance-voltage profiling technique. A more accurate ΔEc value was obtained after the correction for fixed interface charge perturbation. The ΔEc related to the band-gap difference ΔEgs of the heterojunction are found to be ΔEc=0.70ΔEgs. The fixed interface charges are acceptorlike with a density of the order 1010/cm2.
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| Type of Medium: |
Electronic Resource
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| URL: |