Photoreflectance of sulfur-annealed copper indium disulfide
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The temperature dependence of the energy gaps for sulfur-annealed copper indium disulfide has been studied by photoreflectance in the temperature range of 10–300 K. The sulfur-annealed sample has been found to have larger transition energies, smaller positive temperature coefficients of energy gaps, and larger spin-orbit splitting energy than the as-grown sample. This can be explained by the reduction of d-level contributions in the upper valence band probably caused by the variation of lattice distance due to native defects.
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| Type of Medium: |
Electronic Resource
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| URL: |