Epitaxial relations between in situ superconducting YBa2Cu3O7−x thin films and BaTiO3/MgAl2O4/Si substrates
Hwang, D. M. ; Ramesh, R. ; Chen, C. Y. ; Wu, X. D. ; Inam, A. ; Hegde, M. S. ; Wilkens, B. ; Chang, C. C. ; Nazar, L. ; Venkatesan, T. ; Miura, S. ; Matsubara, S. ; Miyasaka, Y. ; Shohata, N.
[S.l.] : American Institute of Physics (AIP)
Published 1990
[S.l.] : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
In situ superconducting YBa2Cu3O7−x films with Tc0 up to 87 K and Jc, 77 K up to 6×104 A/cm2 were prepared on Si substrates with MgAl2O4 and BaTiO3 double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl2O4 layer is heavily faulted. The subsequent BaTiO3 layer stops most of the faults, provides a template for the YBa2Cu3O7−x growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa2Cu3O7−x layer is very similar to that of the films deposited directly on SrTiO3, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.
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| Type of Medium: |
Electronic Resource
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| URL: |