Oxidation of the Si(100) surface promoted by Sr overlayer: An x-ray photoemission study
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The interaction of strontium overlayers with atomically clean Si(100) surface has been studied by x-ray photoelectron spectroscopy. Also studied were the effects of Sr overlayers on the oxidation of silicon at different Sr coverage (0≤θ≤1.85) and different oxygen exposure. It is found that at low coverage, θ≤1 monolayer (ML), Sr interacts with the Si(100) surface to form a strong ionic bond. Also, Sr is found to significantly increase the oxidation of the Si(100) surface. Silicon oxidation increased with increasing Sr coverage to a maximum at θ≈1 ML. Above 1-ML Sr coverage, the rate of Si oxidation decreased with increasing coverage.
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| Type of Medium: |
Electronic Resource
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| URL: |