Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing
Katz, A. ; Chu, S. N. G. ; Weir, B. E. ; Dautremont-Smith, W. C. ; Logan, R. A. ; Tabun-Ek, T. ; Savin, W. ; Harris, D. W.
[S.l.] : American Institute of Physics (AIP)
Published 1990
[S.l.] : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The temperature dependence of the resistance in the Pt(60 nm)/Ti(50 nm) nonalloyed ohmic contacts to p-InAs (Zn doped 1×1018 to 1×1019 cm−3 ) induced by rapid thermal processing in the temperature range of 300–600 °C was studied. The ohmic nature of these contacts was attributed to both the low metal-semiconductor interfacial barriers and to the heavily doped semiconductor contacting layers. A phenomenological model was used to fit the measured temperature dependence contact resistance. The results indicated conversion from thermionic emission as the dominant carriers transport mechanism across the interfacial barrier for the as-deposited sample to a combination of thermionic and field emission mechanism for the heat-treated samples.
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| Type of Medium: |
Electronic Resource
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| URL: |