Light-ion bombarded p-type In0.53Ga0.47As photoconductive detectors
Rao, Mulpuri V. ; Hong, W-P. ; Chang, G-K. ; Papanicolaou, N. ; Dietrich, Harry B.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The effect of H+ and B+ bombardment on the dark current and the impulse response speed of p-type InGaAs photoconductive detectors was studied. The dark current of the detectors decreased with light ion bombardment before the material turned n-type. The lowest dark current of H+ bombarded detectors was 10 μA at 6 V bias. The impulse response speed improved with H+ bombardment but did not change with B+ bombardment, as long as the material remained p-type. However the decay time of the detector response increased when the material turned n-type. The photoresponsivity in H+ bombarded detectors at 1.3 μm was 1 A/W, the bandwidth was 1.8 GHz, and the dark noise power into a 50 Ω load was −110 dBm with a source-drain bias of 6 V. The test structures had 5 μm contact spacing.
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| Type of Medium: |
Electronic Resource
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| URL: |