Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy
Hafich, M. J. ; Lee, H. Y. ; Robinson, G. Y. ; Li, D. ; Otsuka, N.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289664518389761 |
|---|---|
| autor | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. |
| autorsonst | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. |
| book_url | http://dx.doi.org/10.1063/1.348921 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218654855 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1991 |
| publikationsjahr_facette | 1991 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1991 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 69 (1991), S. 752-756 |
| search_space | articles |
| shingle_author_1 | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. |
| shingle_author_2 | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. |
| shingle_author_3 | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. |
| shingle_author_4 | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. |
| shingle_catch_all_1 | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Hafich, M. J. Lee, H. Y. Robinson, G. Y. Li, D. Otsuka, N. Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy |
| shingle_title_2 | Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy |
| shingle_title_3 | Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy |
| shingle_title_4 | Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:26.368Z |
| titel | Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy |
| titel_suche | Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy |
| topic | U |
| uid | nat_lic_papers_NLZ218654855 |