Thermally stimulated current of Li+ ion-implanted amorphous selenium
Kang, T. W. ; Tong, C. ; Eom, G. S. ; Leem, J. Y. ; Kim, T. W.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A thermally stimulated current (TSC) technique is applied to examine the activation energy, capture cross sections, escape frequency, and trap polarity in amorphous Se (a-Se) implanted with low energy (〈20 keV) Li+ ions. TSC glow curves for Li+ -ion-implanted a-Se show two peaks near 230 and 330 K. The value of δ/ω is 0.46 for 230 K, which means that the thermally stimulated currents are due to the first-order kinetics. The trap activation energy levels obtained by peak shape method and various heating rate methods are distributed from 0.22 to 0.33 eV for the 230-K peak and to 1.42 eV for the 330-K peak. The values of the capture cross section and the escape frequencies are 2.75×10−19 cm2 and 5.5×105 s−1 for the 230-K peak, and 5.75×10−20 cm2 and 6.43×105 s−1 for the 330-K peak, respectively. It is found that the trapped charge carriers are mainly holes in Li+ ion-implanted a-Se.
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| Type of Medium: |
Electronic Resource
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| URL: |