InAs quantum-well-base InAs/GaSb hot-electron transistors
Taira, K. ; Funato, K. ; Nakamura, F. ; Kawai, H.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Narrow InAs-base GaSb/InAs hot-electron transistors have been grown by low-pressure metalorganic chemical vapor deposition. The InAs bases are 30, 50, and 100 A(ring) thick. The ground-state electron subband energy E0 is determined from values of collector current. For thinner wells, values of E0 are well explained by a simple effective mass calculation. Here, a mixing of InAs conduction-band states with GaSb valence-band states is neglected because of symmetry mismatch. The effect of nonparabolicity of the InAs conduction band is taken into account.
|
| Type of Medium: |
Electronic Resource
|
| URL: |