An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures
Wang, L. C. ; Wang, X. Z. ; Hsu, S. N. ; Lau, S. S. ; Lin, P. S. D. ; Sands, T. ; Schwarz, S. A. ; Plumton, D. L. ; Kuech, T. F.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The Pd-In-Ge nonspiking Ohmic contact to n-GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n-GaAs with 10–20 A(ring) of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7 Ω cm2 for this contact structure is nearly independent of the contact area from 900 to 0.2 μm2. Low-temperature Ohmic characteristics and thermal stability are also examined.
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| Type of Medium: |
Electronic Resource
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| URL: |