Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon
England, J. M. C. ; Zissis, N. ; Timans, P. J. ; Ahmed, H.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Experiments have been carried out to determine the temperature distributions induced during swept-line electron-beam heating of silicon. In situ measurements of the reflectivity were used to determine the temperature rise, using as a basis the rise in reflectivity exhibited by silicon with increasing temperature. Sweep speeds between 10 and 60 cm/s were studied using line beams between 60 and 300 μm wide. The experimental results were compared with analytic one- and two-dimensional models assuming constant thermal properties, and with a one-dimensional (1D) numerical model which takes into account the variation of heat capacity and thermal conductivity with temperature. The analytic models were used to show the range of conditions over which the 1D approximation could be applied and to quantify the errors introduced as this approximation breaks down. The experimentally measured peak temperatures and those predicted by the numerical model were found to agree to within 5% for conditions where the heat flow was in the 1D regime. For other conditions, the experimental and numerical results were found to differ, but the size of this discrepancy was consistent with the errors introduced by making the 1D approximation in the numerical model.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289663536922624 |
|---|---|
| autor | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. |
| autorsonst | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. |
| book_url | http://dx.doi.org/10.1063/1.350287 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218640870 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Experiments have been carried out to determine the temperature distributions induced during swept-line electron-beam heating of silicon. In situ measurements of the reflectivity were used to determine the temperature rise, using as a basis the rise in reflectivity exhibited by silicon with increasing temperature. Sweep speeds between 10 and 60 cm/s were studied using line beams between 60 and 300 μm wide. The experimental results were compared with analytic one- and two-dimensional models assuming constant thermal properties, and with a one-dimensional (1D) numerical model which takes into account the variation of heat capacity and thermal conductivity with temperature. The analytic models were used to show the range of conditions over which the 1D approximation could be applied and to quantify the errors introduced as this approximation breaks down. The experimentally measured peak temperatures and those predicted by the numerical model were found to agree to within 5% for conditions where the heat flow was in the 1D regime. For other conditions, the experimental and numerical results were found to differ, but the size of this discrepancy was consistent with the errors introduced by making the 1D approximation in the numerical model. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1991 |
| publikationsjahr_facette | 1991 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1991 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 70 (1991), S. 389-397 |
| search_space | articles |
| shingle_author_1 | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. |
| shingle_author_2 | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. |
| shingle_author_3 | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. |
| shingle_author_4 | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. |
| shingle_catch_all_1 | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon Experiments have been carried out to determine the temperature distributions induced during swept-line electron-beam heating of silicon. In situ measurements of the reflectivity were used to determine the temperature rise, using as a basis the rise in reflectivity exhibited by silicon with increasing temperature. Sweep speeds between 10 and 60 cm/s were studied using line beams between 60 and 300 μm wide. The experimental results were compared with analytic one- and two-dimensional models assuming constant thermal properties, and with a one-dimensional (1D) numerical model which takes into account the variation of heat capacity and thermal conductivity with temperature. The analytic models were used to show the range of conditions over which the 1D approximation could be applied and to quantify the errors introduced as this approximation breaks down. The experimentally measured peak temperatures and those predicted by the numerical model were found to agree to within 5% for conditions where the heat flow was in the 1D regime. For other conditions, the experimental and numerical results were found to differ, but the size of this discrepancy was consistent with the errors introduced by making the 1D approximation in the numerical model. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon Experiments have been carried out to determine the temperature distributions induced during swept-line electron-beam heating of silicon. In situ measurements of the reflectivity were used to determine the temperature rise, using as a basis the rise in reflectivity exhibited by silicon with increasing temperature. Sweep speeds between 10 and 60 cm/s were studied using line beams between 60 and 300 μm wide. The experimental results were compared with analytic one- and two-dimensional models assuming constant thermal properties, and with a one-dimensional (1D) numerical model which takes into account the variation of heat capacity and thermal conductivity with temperature. The analytic models were used to show the range of conditions over which the 1D approximation could be applied and to quantify the errors introduced as this approximation breaks down. The experimentally measured peak temperatures and those predicted by the numerical model were found to agree to within 5% for conditions where the heat flow was in the 1D regime. For other conditions, the experimental and numerical results were found to differ, but the size of this discrepancy was consistent with the errors introduced by making the 1D approximation in the numerical model. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon Experiments have been carried out to determine the temperature distributions induced during swept-line electron-beam heating of silicon. In situ measurements of the reflectivity were used to determine the temperature rise, using as a basis the rise in reflectivity exhibited by silicon with increasing temperature. Sweep speeds between 10 and 60 cm/s were studied using line beams between 60 and 300 μm wide. The experimental results were compared with analytic one- and two-dimensional models assuming constant thermal properties, and with a one-dimensional (1D) numerical model which takes into account the variation of heat capacity and thermal conductivity with temperature. The analytic models were used to show the range of conditions over which the 1D approximation could be applied and to quantify the errors introduced as this approximation breaks down. The experimentally measured peak temperatures and those predicted by the numerical model were found to agree to within 5% for conditions where the heat flow was in the 1D regime. For other conditions, the experimental and numerical results were found to differ, but the size of this discrepancy was consistent with the errors introduced by making the 1D approximation in the numerical model. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | England, J. M. C. Zissis, N. Timans, P. J. Ahmed, H. Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon Experiments have been carried out to determine the temperature distributions induced during swept-line electron-beam heating of silicon. In situ measurements of the reflectivity were used to determine the temperature rise, using as a basis the rise in reflectivity exhibited by silicon with increasing temperature. Sweep speeds between 10 and 60 cm/s were studied using line beams between 60 and 300 μm wide. The experimental results were compared with analytic one- and two-dimensional models assuming constant thermal properties, and with a one-dimensional (1D) numerical model which takes into account the variation of heat capacity and thermal conductivity with temperature. The analytic models were used to show the range of conditions over which the 1D approximation could be applied and to quantify the errors introduced as this approximation breaks down. The experimentally measured peak temperatures and those predicted by the numerical model were found to agree to within 5% for conditions where the heat flow was in the 1D regime. For other conditions, the experimental and numerical results were found to differ, but the size of this discrepancy was consistent with the errors introduced by making the 1D approximation in the numerical model. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon |
| shingle_title_2 | Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon |
| shingle_title_3 | Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon |
| shingle_title_4 | Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:25.148Z |
| titel | Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon |
| titel_suche | Time-resolved reflectivity measurements of temperature distributions during swept-line electron-beam heating of silicon |
| topic | U |
| uid | nat_lic_papers_NLZ218640870 |