The nonproportionality of interface-trap generation to hole trapping efficiency in metal-oxide-silicon devices
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The susceptibility to hole trapping of the gate oxide of a metal-oxide-silicon (MOS) device is not necessarily proportional to the efficiency of interface trap generation at the Si-SiO2 interface, which is widely believed due to the recombination of electrons and trapped holes in the oxide close to the interface. In this study, an oxide given a high-temperature (1000 °C) anneal, which increases the hole trapping efficiency of the oxide, is shown to have much less generated interface traps compared to a normal oxide (without high-temperature annealing) upon exposing to ionizing radiation with subsequent electron injection, or high-field injection alone. Under high-field tunneling injection, the electron fluence required to create a certain density of interface trap is an order of magnitude higher for the annealed oxide compared to the normal oxide. These results could provide a possible direction for improving the reliability of the gate oxide of a MOS field-effect transistor.
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| Type of Medium: |
Electronic Resource
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| URL: |