Electrical properties of boron-doped hydrogenated amorphous silicon and n-type GaAs heterojunction
Nagpal, Alka ; Gupta, R. S. ; Srivastava, G. P.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Electrical properties of (p)aSi:H-(n)GaAs heterojunction were investigated by measuring current-voltage and capacitance-voltage characteristics. The experimental results are interpreted in accordance with a generalized a-c junction model. The built-in potential of the heterojunction and the gap-state density in the chemical vapor deposition (p)aSi:H were obtained from the capacitance-voltage characteristics.
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| Type of Medium: |
Electronic Resource
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| URL: |