Evaluation of pulsed radiation effects in buried oxides by fast C-V measurements
Simons, M. ; Campisi, G. ; Hughes, H. L.
[S.l.] : American Institute of Physics (AIP)
Published 1991
[S.l.] : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Fast C-V measurement techniques are utilized to simultaneously probe both upper and lower interfaces of silicon-on-insulator/separation by implantation of oxygen buried oxide capacitors following exposure to pulsed ionizing irradiation. In addition to the relatively stable radiation-induced positive charge, reverse annealing is observed from both Si-SiO2 interfaces over the 200 μs to 300 s post exposure interval; this behavior is consistent with electron detrapping within the oxide. The dependence of electron detrapping on dc annealing bias is attributed to field-enhanced emission effects.
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| Type of Medium: |
Electronic Resource
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| URL: |