Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The basic concepts and preliminary applications of optically induced electromagnetic radiation from semiconductor surfaces and interfaces by using femtosecond optics are discussed. This submillimeter-wave radiation provides a novel optoelectronic technique to study semiconductor electronic surface and interface properties with a contactless approach. The amplitude and phase of the electromagnetic radiation from the semiconductor surfaces depend on carrier mobility, impurity doping concentration, and strength and polarity of the static internal field. A large selection of bulk, epitaxial layer and superlattice samples from III-V, II-VI and group-IV semiconductors has been tested. The orientation and strength of the static built-in fields of a wide range of semiconductor surfaces, such as surface depletion, metal/semiconductor Schottky, p-n junction and strain-induced piezoelectric fields, can be determined and estimated.
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| Type of Medium: |
Electronic Resource
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| URL: |