Transport electronic properties and magnetic susceptibility studies of Al90R10 amorphous alloys with R=Y, La, Ce, Nd, Sm, Gd, Tb, Ho, and Er

Pont, M. ; Puig, T. ; Rao, K. V. ; Inoue, A.

[S.l.] : American Institute of Physics (AIP)
Published 1992
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present ac susceptibility, electrical resistivity, and Hall effect measurements for a new series of Al-rich amorphous alloys Al90R10 with R=Y, La, Ce, Nd, Sm, Gd, Tb, Ho, and Er. The electrical resistivity at room temperature is approximately constant and around 70 μΩ cm, and increases with increasing temperature. The ac susceptibility, measured between 4 and 150 K shows that most of the alloys follow a Curie–Weiss behavior with an effective magnetic moment close to that of the pure rare-earth elements. The ordinary Hall coefficient has a negative value around half of the expected using a free electron approach. Due to the magnetic moment carried by the rare-earth elements in these alloys a magnetic contribution to the Hall effect cannot be ruled out although a detailed comparison with the theory is not available at present.
Type of Medium:
Electronic Resource
URL: