Normal incidence infrared photoabsorption in p-type GaSb/GaxAl1−xSb quantum wells
Xie, H. ; Katz, J. ; Wang, W. I. ; Chang, Y. C.
[S.l.] : American Institute of Physics (AIP)
Published 1992
[S.l.] : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Absorption of infrared radiation at normal incidence from intervalence-subband transitions is investigated in p-type GaSb/Ga1−xAlxSb quantum wells. Normal incidence absorption is allowed in conventional p-type quantum wells due to the favorable properties of the p-like valence-band Bloch states and the heavy- and light-hole mixing. By using GaSb as the quantum-well material, which has the smallest heavy-hole effective mass of the commonly used III-V semiconductors, absorption can be further enhanced. We find that normal incidence absorption of 3000–6000 cm−1 can be easily achieved in these proposed quantum wells with well widths of 55–90 A(ring) for the wavelength range of 8–12 μm and typical sheet doping concentrations of 1012 cm−2. This absorption strength is comparable to that in the intrinsic Hg1−xCdxTe detector. Strong absorption of normally incident radiation makes this structure a good candidate for infrared photodetection.
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| Type of Medium: |
Electronic Resource
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| URL: |