Photoreflection study on the surface electric field of delta-doped GaAs grown by molecular beam epitaxy
Liu, D. G. ; Chang, K. H. ; Lee, C. P. ; Hsu, T. M. ; Tien, Y. C.
[S.l.] : American Institute of Physics (AIP)
Published 1992
[S.l.] : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz–Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.
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| Type of Medium: |
Electronic Resource
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| URL: |