Photoreflection study on the surface electric field of delta-doped GaAs grown by molecular beam epitaxy

Liu, D. G. ; Chang, K. H. ; Lee, C. P. ; Hsu, T. M. ; Tien, Y. C.

[S.l.] : American Institute of Physics (AIP)
Published 1992
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz–Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.
Type of Medium:
Electronic Resource
URL: