Atomic layer growth of oxide thin films with perovskite-type structure by reactive evaporation
Iijima, K. ; Terashima, T. ; Bando, Y. ; Kamigaki, K. ; Terauchi, H.
[S.l.] : American Institute of Physics (AIP)
Published 1992
[S.l.] : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Epitaxial growth of BaTiO3 and SrTiO3 films by the reactive evaporation method was investigated using reflection high-energy electron diffraction (RHEED). The investigations were carried out using two growth methods: coevaporation and alternate evaporation of the metal elements in an oxygen atmosphere. Atomic layer growth was achieved by the alternate supply of Ba or Sr and Ti on the growing surface. In the case of coevaporation, epitaxial growth occurred in a two-dimensional unit-cell-by-unit-cell mode. The surface of each unit cell is terminated by a (TiO2) layer. Artificial superlattices of BaTiO3/SrTiO3 were fabricated by monitoring the film thickness with the RHEED oscillations.
|
| Type of Medium: |
Electronic Resource
|
| URL: |