Reduction of interface phonon modes using metal-semiconductor heterostructures
Bhatt, A. R. ; Kim, K. W. ; Stroscio, M. A. ; Iafrate, G. J. ; Dutta, Mitra ; Grubin, Harold L. ; Haque, Reza ; Zhu, X. T.
[S.l.] : American Institute of Physics (AIP)
Published 1993
[S.l.] : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1089-7550
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Based on a simplified analysis of perfectly conducting metals, it has been suggested qualitatively that establishing metal-semiconductor interfaces at the heterojunctions of polar semiconductor quantum wells introduces a set of boundary conditions that dramatically reduces or eliminates unwanted carrier energy loss caused by interactions with interface longitudinal-optical (LO) phonon modes. In this article, it is theoretically demonstrated that comparable reductions in LO phonon scattering strengths may be achieved for metal-semiconductor structures with metal having realistic conductivities and Thomas–Fermi screening lengths.
|
| Type of Medium: |
Electronic Resource
|
| URL: |