p-type CdTe epilayers grown by hot-wall-beam epitaxy
Pauli, H. ; Hingerl, K. ; Abramof, E. ; Sitter, H. ; Zajicek, H. ; Lischka, K.
[S.l.] : American Institute of Physics (AIP)
Published 1993
[S.l.] : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Highly conducting p-type CdTe films were grown by photoassisted hot-wall-beam epitaxy using Li3N as a dopant source. Doping levels can be controlled from p=4×1016 to 2×1018 cm−3, as determined by Van der Pauw measurements. The hall mobility ranges from 30 to 100 cm2/V s, depending on the hole concentration. Photoassisted growth enhances the incorporation of dopants by one order of magnitude and decreases the growth rate.
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| Type of Medium: |
Electronic Resource
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| URL: |