Resistive transition of Bi(2223) silver clamped thick film
Han, G. C. ; Wang, Y. G. ; Han, H. M. ; Wang, Z. H. ; Wang, S. X. ; Yuan, W. F. ; Liu, Z. M. ; Huang, Q. L. ; Chen, J. L.
[S.l.] : American Institute of Physics (AIP)
Published 1993
[S.l.] : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289656490491904 |
|---|---|
| autor | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. |
| autorsonst | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. |
| book_url | http://dx.doi.org/10.1063/1.354297 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218579160 |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1993 |
| publikationsjahr_facette | 1993 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1993 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 74 (1993), S. 5108-5111 |
| search_space | articles |
| shingle_author_1 | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. |
| shingle_author_2 | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. |
| shingle_author_3 | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. |
| shingle_author_4 | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. |
| shingle_catch_all_1 | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. Resistive transition of Bi(2223) silver clamped thick film Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. Resistive transition of Bi(2223) silver clamped thick film Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. Resistive transition of Bi(2223) silver clamped thick film Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Han, G. C. Wang, Y. G. Han, H. M. Wang, Z. H. Wang, S. X. Yuan, W. F. Liu, Z. M. Huang, Q. L. Chen, J. L. Resistive transition of Bi(2223) silver clamped thick film Detailed measurements of voltage-current (V-I) curves and magnetoresistance (R-H) for Bi(2223) thick film were carried out for various temperatures and magnetic fields. The results indicate that a flux lattice melting transition takes place as the temperature and the field are raised. This transition boundary in the (H,T) phase diagram was found to follow the irreversibility line described by the function of H=H0(1−T/Tc)3/2. Above this line, the V-I curves display a flux-flow-like character. Temperature and magnetic field dependencies of flow resistance Rf-T and Rf-H show a varied viscosity in different temperature and field ranges. Below this line, V-I curves in the low voltage region present a thermally activated flux creep property. The R-H measurements indicate that the fields at the onset and the midpoint of the magnetoresistive transition also follow a (1−T/Tc)3/2 dependence. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Resistive transition of Bi(2223) silver clamped thick film |
| shingle_title_2 | Resistive transition of Bi(2223) silver clamped thick film |
| shingle_title_3 | Resistive transition of Bi(2223) silver clamped thick film |
| shingle_title_4 | Resistive transition of Bi(2223) silver clamped thick film |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:18.635Z |
| titel | Resistive transition of Bi(2223) silver clamped thick film |
| titel_suche | Resistive transition of Bi(2223) silver clamped thick film |
| topic | U |
| uid | nat_lic_papers_NLZ218579160 |