Study of vibrational properties of InGaAsP by far-infrared reflectivity
Amiotti, M. ; Guizzetti, G. ; Patrini, M. ; Piaggi, A. ; Borghesi, A. ; Colombo, L. ; Landgren, G.
[S.l.] : American Institute of Physics (AIP)
Published 1994
[S.l.] : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1089-7550
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We measured room-temperature reflectivity in the far-infrared region (100–700 cm−1) of In1−xGaxAsyP1−y films grown by metalorganic phase epitaxy on InP substrate. The actual As content of the quaternary alloy (ranging from y=0.29 to y=1) was derived by combining photoluminescence and high-resolution x-ray diffraction results. Over the whole compositional range four different vibrational branches, corresponding to InAs-like, GaAs-like, InP-like, and GaP-like mode, have been observed, thus confirming the attribution of "four-mode behavior'' to the quaternary alloy. The frequency position of the four main peaks has been calculated within a valence-force-field model. The frequency shift of these peaks in the alloy with respect to the bulk values has been explained taking into account anharmonicity and strain effects by means of a simplified elastic model.
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| Type of Medium: |
Electronic Resource
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| URL: |