Interface properties of thin oxides grown on strained GexSi1−x layer

Nayak, D. K. ; Park, J. S. ; Woo, J. C. S. ; Wang, K. L. ; Ivanov, I. C.

[S.l.] : American Institute of Physics (AIP)
Published 1994
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289652105347073
autor Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
autorsonst Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
book_url http://dx.doi.org/10.1063/1.357776
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218553447
issn 1089-7550
journal_name Journal of Applied Physics
materialart 1
notes The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 1994
publikationsjahr_facette 1994
publikationsjahr_intervall 8009:1990-1994
publikationsjahr_sort 1994
publikationsort [S.l.]
publisher American Institute of Physics (AIP)
reference 76 (1994), S. 982-986
search_space articles
shingle_author_1 Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
shingle_author_2 Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
shingle_author_3 Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
shingle_author_4 Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
shingle_catch_all_1 Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
Interface properties of thin oxides grown on strained GexSi1−x layer
The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_2 Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
Interface properties of thin oxides grown on strained GexSi1−x layer
The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_3 Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
Interface properties of thin oxides grown on strained GexSi1−x layer
The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_catch_all_4 Nayak, D. K.
Park, J. S.
Woo, J. C. S.
Wang, K. L.
Ivanov, I. C.
Interface properties of thin oxides grown on strained GexSi1−x layer
The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
1089-7550
10897550
American Institute of Physics (AIP)
shingle_title_1 Interface properties of thin oxides grown on strained GexSi1−x layer
shingle_title_2 Interface properties of thin oxides grown on strained GexSi1−x layer
shingle_title_3 Interface properties of thin oxides grown on strained GexSi1−x layer
shingle_title_4 Interface properties of thin oxides grown on strained GexSi1−x layer
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titel Interface properties of thin oxides grown on strained GexSi1−x layer
titel_suche Interface properties of thin oxides grown on strained GexSi1−x layer
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