Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence
Parsons, C. A. ; Kim, M. H. ; Quinn, W. E. ; Herrmann, H. B. ; Swirhun, S. E. ; Brierley, S. K.
[S.l.] : American Institute of Physics (AIP)
Published 1994
[S.l.] : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1089-7550
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit.
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| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289651852640256 |
|---|---|
| autor | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. |
| autorsonst | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. |
| book_url | http://dx.doi.org/10.1063/1.357800 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218552890 |
| iqvoc_descriptor_title | iqvoc_00000627:transistor |
| issn | 1089-7550 |
| journal_name | Journal of Applied Physics |
| materialart | 1 |
| notes | Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1994 |
| publikationsjahr_facette | 1994 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1994 |
| publikationsort | [S.l.] |
| publisher | American Institute of Physics (AIP) |
| reference | 76 (1994), S. 1343-1345 |
| search_space | articles |
| shingle_author_1 | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. |
| shingle_author_2 | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. |
| shingle_author_3 | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. |
| shingle_author_4 | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. |
| shingle_catch_all_1 | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Parsons, C. A. Kim, M. H. Quinn, W. E. Herrmann, H. B. Swirhun, S. E. Brierley, S. K. Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit. 1089-7550 10897550 American Institute of Physics (AIP) |
| shingle_title_1 | Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence |
| shingle_title_2 | Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence |
| shingle_title_3 | Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence |
| shingle_title_4 | Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:04:14.201Z |
| titel | Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence |
| titel_suche | Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence |
| topic | U |
| uid | nat_lic_papers_NLZ218552890 |